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| savantic semiconductor product specification silicon npn power transistors MJE4340/4341/4342/4343 description with to-3pn package respectively complement to type mje4350/4351/4352/4353 dc current gain h fe =8(min)@i c =16a applications for use in high power audio amplifier and switching regulator circuits pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(t c =25 ) symbol parameter conditions value unit MJE4340 100 mje4341 120 mje4342 140 v cbo collector-base voltage mje4343 open emitter 160 v MJE4340 100 mje4341 120 mje4342 140 v ceo collector-emitter voltage mje4343 open base 160 v v ebo emitter-base voltage open collector 7 v i c collector current 16 a i cm collector current-peak 20 a i b base current 5 a p c collector power dissipation t c =25 125 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.0 /w fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors MJE4340/4341/4342/4343 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit MJE4340 100 mje4341 120 mje4342 140 v ceo(sus) collector-emitter sustaining voltage mje4343 i c =100ma ;i b =0 160 v v ce (sat) -1 collector-emitter saturation voltage i c =8a ;i b =0.8a 2.0 v v ce (sat) -2 collector-emitter saturation voltage i c =16a; i b =2.0a 3.5 v v be (sat) base-emitter saturation voltage i c =16a; i b =2.0a 3.9 v v be base-emitter on voltage i c =16a ; v ce =4v 3.9 v MJE4340 v ce =50v; i b =0 mje4341 v ce =60v; i b =0 mje4342 v ce =70v; i b =0 i ceo collector cut-off current mje4343 v ce =80v; i b =0 0.75 ma i cex collector cut-off current v ce =ratedv cbo ; v be =1.5v t c =150 1.0 5.0 ma i cbo collector cut-off current v cb =ratedv cb ; i e =0 0.75 ma i ebo emitter cut-off current v eb =7v; i c =0 1.0 ma h fe-1 dc current gain i c =8a ; v ce =2v 15 h fe-2 dc current gain i c =16a ; v ce =4v 8 c ob output capacitance i e =0 ; v cb =10v;f=0.1mhz 800 pf f t transition frequency i c =-1a ; v ce =20v;f=0.5mhz 1.0 mhz savantic semiconductor product specification 3 silicon npn power transistors MJE4340/4341/4342/4343 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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